power mo sfet 1.0 amps, 600/650 volts n-channel mosfet ? description 1N65 is a hig h voltage mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) =11.5 ? @v gs = 10v. * ultra lo w gate charge (typical 5.0nc) * low reverse transfer capacitance (c rss = typical 3. 0 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol 1.ga te 3.source 2.drai n 1 1 to-22 0 1 1 ito-220/to-220f ? ordering information note: pin assignment: g: ga te d: drain s: source 1n60 1N65 1 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 1n60 1N65 to-251/ipak to-252/dpak 1n6 0 pa rt no. package packing 1n6* -tu to -251 75pcs / tube 1n6* -tr to -252 2.5kpcs / 13 reel 1n6* -tu to -220 50pcs / tube 1n6* -tu ito-220/to-220f 50pcs / tube 1n6* -tu to -252 75 pcs / tube 1n6* - tu to-262 50 pcs / tube 1n6* -tu to-263 1n6* -tr to-263 800pcs / 13" reel 5 0 pcs / tube 1n60 pin assig n men t ordering n um ber package 1 2 3 t o -220 g d s ito-220/to-220f g d s g d s g d s 1N65 to-251/ipak to-252/dpak a l l d a t a s h e e t
4.53 110 28 power m o sfet ? absolute maxi mu m ratings (t c = 2 5 , unless other wise specified) paramet er symbol rat ings unit 1n60 600 v drain-s ource voltag e 1N65 v ds s 650 v gate-source v o ltage v gss 30 v avala n che curr ent (note 1) i ar 1.0 a contin uo us drain current i d 1.0 a pulse d drain current (note 1) i dm 4.8 a singl e puls ed (note 2) e as 50 mj ava l anche energy repetitiv e (note 1) e ar 4.0 mj peak di ode r ecovery dv/dt (note 3) dv/dt 4.5 v/ns 28 w w t o -220 40 w t o -220f 21 w t o -92(t a =2 5 ) 1 w po w er dissipat ion p d junctio n temperature t j + 150 operatin g t emperature t opr -55 ~ +150 storage t e mperature t st g -55 ~ +150 note: absolut e maximum ratings are thos e values beyond which the device could be permanently damaged. absol u te maximum ratings are stress ratings only an d functi onal device operat io n is not i mplied. ? th er mal data paramet er symbol ratings unit to -220 62.5 t o -220f 62.5 t o -92 140 junctio n -to-ambient ja /w t o -220 3.13 to -220f 5.95 junctio n -to-case jc /w 1n60 1N65 2 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 1n60 1N65 to-251/ipak to-252/dpak 110 to-251/ipak to-252/dpak to-251/ipak to-252/dpak 4.53 a l l d a t a s h e e t
1n60 power m o sfet ? electric al ch aracteris tic s (t c =2 5 , unless oth erw is e specified.) paramet er symbol tes t conditions min t yp max unit off ch a rac teristics v drain-s ource breakd own voltage 1N65 bv ds s v gs =0 v, i d = 250 a 650 v drain-s ource l eakage curr en t i ds s v ds = 600v, v gs =0 v 1 0 a fo rw ard v gs = 30v, v ds =0v 100 na gate-source l eaka ge current reverse i gss v gs = - 30v, v ds = 0 v -100 na breakd o wn vo l tage temperature coefficient bv ds s /t j i d = 250 a 0.4 v/ on ch a rac t eristics gate t h reshold voltage v gs( t h) v ds =v gs , i d = 250 a 2.0 4.0 v static drain-s o urce on-state resistance r ds (on) v gs = 10v, i d = 0 .5a 9.3 11.5 ? dyn a mic ch a racteristics input cap a citance c iss 120 150 pf output capac itance c oss 20 25 pf reverse t r ansfer capacitance c rs s v ds = 25v, v gs = 0 v, f=1mhz 3.0 4.0 pf switching c h ara c teristics t u rn-on delay t i me t d(on) 5 20 ns t u rn-on rise time t r 25 60 ns t u rn-off delay t i me t d(off) 7 25 ns t u rn-off fall ti me t f v dd = 300v, i d =1.0a, r g =5 0 ? (note 4,5) 25 60 ns t o tal gate charge q g 5.0 6.0 nc gate-source c harg e q gs 1.0 nc gate-drain charge q gd v ds = 480v, v gs = 10v, i d =1 .0 a (note 4,5) 2.6 nc source-dr a in diode rat i ngs and characteristics drain-s ource diode f o rward voltage v sd v gs =0 v, i s =1 . 0a 1. 4 v maximum co ntinuo us drain-source di od e fo rward c u rrent i s 1.2 a maximum puls ed drai n-source diod e fo rward c u rrent i sm 4.8 a reverse recover y time t rr 160 ns reverse recover y charge q rr v gs =0 v, i s =1 .0 a di f /dt= 100a/ s (note1) 0.3 c note: 1. re petitive ra ting: pulse width li mited by ma xi mum junction temperature 2. l = 60mh, i as = 1 a , v dd = 50v, r g = 2 5 ? , starting t j = 25c 3. i sd 1.0a, di/dt 200a/ s, v dd bv ds s , starting t j = 25c 4. pulse t est: pulse w i dth 30 0 s, dut y cyc l e 2% 5. essential ly i nde pendent of operatin g temperatur e 600 1n60 1N65 3 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 1n60 1N65 a l l d a t a s h e e t
power m o sfet ? test circ uits and wavefor m s same type as d.u.t. l v dd drive r v gs r g - v ds d.u.t. + * d v/d t co ntroll ed by r g * i sd co ntr oll e d by pulse period * d.u.t.-d e vice under test p. w. period d= v gs ( d river) i sd (d .u .t.) i fm , bo dy dio de forwa r d current di/dt i rm bod y diod e reve rse current body di od e recovery dv/dt body diode forward voltage drop v dd 10 v v ds (d.u.t. ) - + v gs = p.w. period f i g. 1 a peak diode recovery dv/dt test circuit f i g. 1 b peak diode recovery dv/dt waveforms 1n60 1N65 4 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 1n60 1N65 a l l d a t a s h e e t
power m o sfet ? test circ uits and waveforms (cont.) fig. 2a switching test circuit fig. 2b swi t ching waveforms f ig. 3a g ate charge test circuit fig. 3b gate charge waveform d.u. t. r d 10 v v ds l v dd t p v dd t p time bv dss i as i d(t ) v ds (t) fig. 4a unclam pe d inductive switching test circuit fig. 4b uncla m ped inductive switching waveforms 1n60 1N65 5 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 1n60 1N65 a l l d a t a s h e e t
power m o sfet ? ty pic al charact eristics drain current ,i d (ma) dr ain curre nt, i d (a) dr ain cur rent,i d (a) drain current ,i d (a) 1n60 1N65 6 of 6 z ibo seno electronic engineering co., ltd. www.senocn.com 1n60 1N65 a l l d a t a s h e e t
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